VBT2080S-M3 www.vishay.com vishay general semiconductor revision: 14-may-13 1 document number: 87977 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 trench mos barrier schottky rectifier ultra low v f = 0.46 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-std-020, lf maximum peak of 245 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters, and reverse battery protection. mechanical data case: to-263ab ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms primary characteristics package to-263ab i f(av) 20 a v rrm 80 v i fsm 150 a v f at i f = 20 a 0.70 v t j max. 150 c diode variation single die tmbs ? to-263ab nc a k vbt2080s nc a k heatsink maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vbt2080s unit maximum repetitive pe ak reverse voltage v rrm 80 v maximum average forward rectified current (fig. 1) i f(av) 20 a peak forward surge current 8.3 ms single half ? sine-wave superimposed on rated load i fsm 150 a operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage (1) i f = 5 a t a = 25 c v f 0.52 - v i f = 10 a 0.61 - i f = 20 a 0.80 0.92 i f = 5 a t a = 125 c 0.46 - i f = 10 a 0.54 - i f = 20 a 0.70 0.78 reverse current (2) v r = 80 v t a = 25 c i r 30 700 a t a = 125 c 20 35 ma
VBT2080S-M3 www.vishay.com vishay general semiconductor revision: 14-may-13 2 document number: 87977 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vbt2080s unit typical thermal resistance r ? jc 1.8 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-263ab VBT2080S-M3/4w 1.38 4w 50/tube tube to-263ab VBT2080S-M3/8w 1.38 8w 800/reel tape and reel case temperat u re (c) 24 16 0 0 75 175 avera ge forward c u rrent (a) 25 100 150 4 50 125 8 20 12 resistive or ind u ctive load d = 0.1 d = 0.2 d = 0.3 d = 1.0 average forward c u rrent (a) 20 1 8 0 01224 average power loss ( w ) 416 2 8 20 8 4 14 d = t p /t t p t d = 0.5 16 6 d = 0. 8 12 10 t a = 150 c t a = 125 c t a = 25 c instantaneo u s forward v oltage ( v ) 100 0.1 0 0.6 1.2 instantaneo u s forward c u rrent (a) 0.2 0. 8 1 0.4 1.0 t a = 100 c 10 percent of rated peak reverse v oltage (%) 100 0.001 20 40 100 instantaneo u s reverse c u rrent (ma) 50 1 30 60 10 90 70 0.1 0.01 8 0 t a = 150 c t a = 125 c t a = 25 c t a = 100 c
VBT2080S-M3 www.vishay.com vishay general semiconductor revision: 14-may-13 3 document number: 87977 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) reverse v oltage ( v ) 10 000 10 0.1 100 j u nction capacitance (pf) 1 100 10 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 1000 t - p u lse d u ration (s) 10 0.1 0.01 10 100 transient t hermal impe dance (c/ w ) 0.1 1 j u nction to case 1 to-263ab 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . n ca k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n . mounting pad layout
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